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37.0-42.0 GHz GaAs MMIC Power Amplifier
February 2007 - Rev 01-Feb-07
P1018-BD Chip Device Layout
Features
Excellent Transmit Output Stage Output Power Adjust 26.0 dB Small Signal Gain +25.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010
General Description
Mimix Broadband's four stage 37.0-42.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +25.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd) Supply Current (Id1,2,3,4) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)
+6.0 VDC 45,80,165,325 mA +0.3 VDC TBD -65 to +165 OC -55 to MTTF Table1 MTTF Table 1
(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Output Power for 1dB Compression (P1dB) 2 Drain Bias Voltage (Vd1,2,3,4) Gate Bias Voltage (Vg1,2,3,4) Supply Current (Id1) (Vd=5.0V, Vg=-0.7V Typical) Supply Current (Id2) (Vd=5.0V, Vg=-0.7V Typical) Supply Current (Id3) (Vd=5.0V, Vg=-0.7V Typical) Supply Current (Id4) (Vd=5.0V, Vg=-0.7V Typical)
(2) Measured using constant current.
Units GHz dB dB dB dB dB dBm VDC VDC mA mA mA mA
Min. 37.0 -1.0 -
Typ. 9.0 10.0 26.0 +/-1.5 45.0 +25.0 +5.0 -0.7 35 60 125 245
Max. 42.0 +5.5 0.0 40 70 150 295
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 8
Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
37.0-42.0 GHz GaAs MMIC Power Amplifier
February 2007 - Rev 01-Feb-07
P1018-BD
Power Amplifier Measurements
XP1018 Vd1,2,3,4=5.0 V Id1=35 mA, Id2=60 mA, Id3=125 mA, Id4=245 mA, ~2500 Devices
30 29 28 27 Gain (dB) 26 25 24 23 22 21 20 35 36 37 38 39 40 41 42 43 44 45 Frequency (GHz) Max Median Mean -3sigma
XP1018 Vd1,2,3,4=5.0 V Id1=35 mA, Id2=60 mA, Id3=125 mA, Id4=245 mA, ~2500 Devices
0 -10 Reverse Isolation (dB) -20 -30 -40 -50 -60 -70 -80 35 36 37 38 39 40 41 42 43 44 45 Frequency (GHz) Max Median Mean -3sigma
XP1018 Vd1,2,3,4=5.0 V Id1=35 mA, Id2=60 mA, Id3=125 mA, Id4=245 mA, ~2500 Devices
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 35 36 37 38 39 40 41 42 43 44 45 Frequency (GHz) Max Median Mean -3sigma
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 -32 35
XP1018 Vd1,2,3,4=5.0 V Id1=35 mA, Id2=60 mA, Id3=125 mA, Id4=245 mA, ~2500 Devices
Output Return Loss (dB)
Input Return Loss (dB)
36
37
38
39
40
41
42
43
44
45
Frequency (GHz) Max Median Mean -3sigma
XP1018-BD: Pout (dBm) vs. freq (GHz) Pin=-5..+5
27
26
25
Pout (dBm)
24
23
22
21
20 36 36.5 37 37.5 38 38.5 39 39.5 40 40.5 41
freq (GHz)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 8
Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
37.0-42.0 GHz GaAs MMIC Power Amplifier
February 2007 - Rev 01-Feb-07
P1018-BD
Typical S-Parameter Data
Vd=5.0 V Id1=35 mA, Id2=60 mA, Id3=125 mA, Id4=245 mA Frequency (GHz) 30.0 31.0 32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 46.0 47.0 48.0 49.0 50.0 S11 (Mag) 0.940 0.918 0.895 0.865 0.799 0.668 0.392 0.056 0.361 0.431 0.390 0.294 0.215 0.235 0.318 0.372 0.357 0.208 0.167 0.372 0.534 S11 (Ang) 166.72 160.79 154.19 146.15 134.26 116.35 89.70 -139.88 -163.89 172.55 158.03 155.03 170.09 -171.97 -166.98 -177.71 153.74 110.14 -13.13 -58.88 -86.46 S21 (Mag) 0.973 1.439 2.174 3.330 5.328 8.807 13.998 17.870 17.691 16.144 15.076 15.492 16.183 15.015 11.838 8.093 5.027 2.823 1.439 0.680 0.311 S21 (Ang) 126.18 93.29 57.85 18.79 -23.67 -73.36 -133.53 154.86 87.55 29.35 -23.67 -78.70 -139.23 152.39 80.99 13.07 -52.46 -114.47 -174.53 134.81 88.80 S12 (Mag) 0.0016 0.0014 0.0027 0.0015 0.0009 0.0006 0.0019 0.0028 0.0027 0.0019 0.0023 0.0026 0.0029 0.0015 0.0031 0.0029 0.0016 0.0006 0.0008 0.0008 0.0013 S12 (Ang) 125.63 103.26 90.17 31.96 -9.64 -96.69 107.67 134.73 57.83 35.08 49.33 27.34 4.03 -20.71 -9.65 -57.16 -84.71 -129.77 -49.86 -83.22 -113.98 S22 (Mag) 0.793 0.737 0.685 0.605 0.518 0.436 0.310 0.239 0.179 0.178 0.203 0.248 0.326 0.355 0.361 0.355 0.407 0.450 0.526 0.591 0.637 S22 (Ang) -116.09 -127.95 -141.44 -155.99 -171.42 169.08 147.17 119.47 106.28 73.00 42.37 0.33 -40.82 -80.28 -113.60 -134.54 -155.94 -176.19 165.42 147.23 131.07
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 8
Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
37.0-42.0 GHz GaAs MMIC Power Amplifier
February 2007 - Rev 01-Feb-07
P1018-BD
0.592 (0.023) 0.992 (0.039) 1.392 (0.055) 2.193 (0.086)
Mechanical Drawing
1.700 (0.067)
2
3
4
5
1.099 (0.043)
1
6
0.639 (0.025)
10 0.0 0.0 0.592 (0.023)
9 0.992 (0.039)
8 1.392 (0.055)
7 1.993 (0.078) 2.500 (0.098)
(Note: Engineering designator is 38MPA0725)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008) Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 2.241 mg. Bond Pad #1 (RF In) Bond Pad #2 (Vd1) Bond Pad #3 (Vd2) Bond Pad #4 (Vd3) Bond Pad #5 (Vd4) Bond Pad #6 (RF Out) Bond Pad #7 (Vg4) Bond Pad #8 (Vg3) Bond Pad #9 (Vg2) Bond Pad #10 (Vg1)
Bias Arrangement
Vd1
Vd2
Bypass Capacitors - See App Note [2]
Vd3 Vd4
2
3
4
5
RF In
1
6
RF Out
10
9
8
7
Vg1 Vg2 Vg3
Vg4
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 8
Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
37.0-42.0 GHz GaAs MMIC Power Amplifier
February 2007 - Rev 01-Feb-07
P1018-BD
App Note [1] Biasing - It is recommended to separately bias each amplifier stage Vd1 through Vd4 at Vd(1,2,3,4)=5.0V with Id1=35mA, Id2=60mA, Id3=125mA and Id4=245mA. Separate biasing is recommended if the amplifier is to be used at high levels of saturation, where gate rectification will alter the effective gate control voltage. For non-critical applications it is possible to parallel all stages and adjust the common gate voltage for a total drain current Id(total)=465 mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.7V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] Bias Arrangement -
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads. For Individual Stage Bias (Recommended for saturated applications) -- Each DC pad (Vd1,2,3,4 and Vg1,2,3,4) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
App Note [3] Output Power Adjust Using Gate Control - This device has a very useful additional feature. The output power can be adjusted by lowering the individual or combined gate voltages towards pinch off without sacrificing much in the way of Input/Output 3rd Order Intercept Point. Improvements to the IIP3/OIP3 data shown here while attenuating the gain are also possible with individual gate control. Data here has been taken using combined gate control (all gates changed together) to lower the device's output power. The results are shown below. Additionally, the accompanying graphs show the level and linearity of the typical attenuation achievable as the gate is adjusted at various levels until pinch-off.
XP1018-BD: Pout vs. Vd @ 40 GHz and Pin=+5dBm
20
10
Output Power (dBm)
0
-10
-20
-30
-40
-50 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Drain voltage (V)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 8
Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
37.0-42.0 GHz GaAs MMIC Power Amplifier
February 2007 - Rev 01-Feb-07
P1018-BD
MTTF Graphs
XP1018 Vd1,2,3,4=5.0 V, Id1=35 mA, Id2=60 mA, Id3=125 mA, Id4=245 mA
1.00E+08
1.00E+05
XP1018 Vd1,2,3,4=5.0 V, Id1=35 mA, Id2=60 mA, Id3=125 mA, Id4=245 mA
1.00E+07 MTTF (hours)
1.00E+04
1.00E+06
FITS
1.00E+03
1.00E+05
1.00E+02
1.00E+04
1.00E+01
1.00E+03 55 65 75 85 95 105 115 125 Baseplate Temperature (deg C) No RF Pout=P1dB
1.00E+00 55 65 75 85 95 105 115 125 Baseplate Temperature (deg C) No RF Pout=P1dB
XP1018 Vd1,2,3,4=5.0 V, Id1=35 mA, Id2=60 mA, Id3=125 mA, Id4=245 mA
60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 55 65 75 85 95 105 115 125 Baseplate Temperature (deg C) No RF Pout=P1dB
XP1018 Vd1,2,3,4=5.0 V, Id1=35 mA, Id2=60 mA, Id3=125 mA, Id4=245 mA
275
250
Rth (deg C/W)
Tch (deg C)
225
200
175
150 55 65 75 85 95 105 115 125 Baseplate Temperature (deg C) No RF Pout=P1dB
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 6 of 8
Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
37.0-42.0 GHz GaAs MMIC Power Amplifier
February 2007 - Rev 01-Feb-07
P1018-BD
Typical Application
RF OUT 37.0-39.5 GHz XP1018 XU1004 Coupler IF In 2 GHz
Mixer Buffer
X2
LO(+2.0dBm) 17.5-18.75 GHz (USB Operation) 19.5-20.75 GHz (LSB Operation)
Mimix Broadband MMIC-based 37.0-42.0 GHz Transmitter Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 42 GHz)
Mimix Broadband's 35.0-45.0 GHz XU1004 GaAs MMIC Transmitter can be used in saturated radio applications and linear modulation schemes up to 128 QAM. The receiver can be used in upper and lower sideband applications from 37.0-42.0 GHz.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 7 of 8
Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
37.0-42.0 GHz GaAs MMIC Power Amplifier
February 2007 - Rev 01-Feb-07
Handling and Assembly Information
P1018-BD
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.076 mm (0.003") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310C +/- 10C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Part Number for Ordering
XP1018-BD-000X XP1018-BD-EV1
Description
Where "X" is RoHS compliant die packed in "V" - vacuum release gel packs or "W" - waffle trays XP1018-BD evaluation module
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 8 of 8
Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.

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